parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 23 i c @ t c = 100c continuous collector current 12 a i cm pulsed collector current ? 92 i lm clamped inductive load current ? 92 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 180 mj p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) c irg4bc30w-s insulated gate bipolar transistor pd - 91790 e c g n-channel features ? designed expressly for switch-mode power supply and pfc (power factor correction) applications ? industry-benchmark switching losses improve efficiency of all power supply topologies ? 50% reduction of eoff parameter ? low igbt conduction losses ? latest-generation igbt design and construction offers tighter parameters distribution, exceptional reliability ? lower switching losses allow more cost-effective operation than power mosfets up to 150 khz ("hard switched" mode) ? of particular benefit to single-ended converters and boost pfc topologies 150w and higher ? low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 khz) benefits v ces = 600v v ce(on) typ. = 2.10v @v ge = 15v, i c = 12a 8/13/98 parameter typ. max. units r q jc junction-to-case CCC 1.2 c/w r q ja junction-to-ambient, ( pcb mounted,steady-state)* CCC 40 thermal resistance absolute maximum ratings w 2 d pak www.irf.com 1 * when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994.
irg4bc30w-s 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 51 76 i c = 12a q ge gate - emitter charge (turn-on) 7.6 11 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 18 27 v ge = 15v t d(on) turn-on delay time 25 t r rise time 16 t j = 25c t d(off) turn-off delay time 99 150 i c = 12a, v cc = 480v t f fall time 67 100 v ge = 15v, r g = 23 w e on turn-on switching loss 0.13 energy losses include "tail" e off turn-off switching loss 0.13 mj see fig. 9, 10, 13, 14 e ts total switching loss 0.26 0.35 t d(on) turn-on delay time 24 t j = 150c, t r rise time 17 i c = 12a, v cc = 480v t d(off) turn-off delay time 150 v ge = 15v, r g = 23 w t f fall time 150 energy losses include "tail" e ts total switching loss 0.55 mj see fig. 11,13, 14 l e internal emitter inductance 7.5 nh measured 5mm from package c ies input capacitance 980 v ge = 0v c oes output capacitance 71 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 18 ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 18 v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.34 v/c v ge = 0v, i c = 1.0ma 2.1 2.7 i c = 12a v ge = 15v v ce(on) collector-to-emitter saturation voltage 2.45 i c = 23a see fig.2, 5 1.95 i c = 12a , t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -11 mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 11 16 s v ce = 100 v, i c = 12a 250 v ge = 0v, v ce = 600v 2.0 v ge = 0v, v ce = 10v, t j = 25c 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 23 w , (see fig. 13a) ? repetitive rating; pulse width limited by maximum junction temperature.
irg4bc30w-s www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j t = 150 c j 0.1 1 10 100 5.0 6.0 7.0 8.0 9.0 10.0 11.0 v , gate-to-emitter volta g e (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j t = 150 c j 0.0 1.0 2.0 3.0 4.0 5.0 0.1 1 10 100 1000 f, frequency (khz) load current (a) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 1.75w
irg4bc30w-s 4 www.irf.com 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 0 5 10 15 20 25 25 50 75 100 125 150 maximum dc collector current (a t , case temperature (c) c v = 1 5 v ge a -60 -40 -20 0 20 40 60 80 100 120 140 160 1.5 2.0 2.5 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 24 c i = a 12 c i = a 6 c
irg4bc30w-s www.irf.com 5 0 10 20 30 40 50 0.0 0.1 0.2 0.3 0.4 0.5 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 12a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.01 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 24 c i = a 12 c i = a 6 c fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 1 10 100 0 500 1000 1500 2000 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res 23 w r g , gate resistance ( w ) 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 12a cc c
irg4bc30w-s 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 0.1 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-emitter voltage (v) i , c ollector-to-em itter c urrent (a) safe operating area v = 20v t = 125c ge j 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 23 w
irg4bc30w-s www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c ? ? * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v d river* 1000v d.u.t. i c c v ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
irg4bc30w-s 8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice.8/98 10.16 (.400) r e f . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f . - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m a x. notes: 1 d im e n s io n s a f te r s o ld e r d ip . 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0 .25 (.0 10 ) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2 x lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 2.54 (.100) 2x d 2 pak package outline
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